? 2010 ixys corporation, all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 800 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 50 a t j = 125c 3 ma r ds(on) v g s = 10v, i d = 0.5 ? i d25 , note 1 160 m ? ds99005d(01/10) hiperfet tm power mosfets q-class features double metal process for low gate resistance avalanche rated low package inductance fast intrinsic rectifier advantages easy to mount space savings high power density applications switch-mode and resonant-mode power supplies >500khz switching dc-dc converters dc choppers pulse generation laser drivers IXFB50N80Q2 v dss = 800v i d25 = 50a r ds(on) ? ?? 160m ? ? t rr 300ns symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c, r gs = 1m ? 800 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 50 a i dm t c = 25 c, pulse width limited by t jm 200 a i a t c = 25 c 50 a e as t c = 25 c 5 j dv/dt i s i dm , v dd v d ss , t j 150 c 20 v/ns p d t c = 25 c 1135 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c weight 10 g n-channel enhancement mode avalanche rated, low q g , low intrinsic r g high dv/dt, low t rr g = gate d = drain s = source tab = drain plus264 s g d tab
ixys reserves the right to change limits, test conditions, and dimensions. IXFB50N80Q2 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v d s = 10v, i d = 0.5 ? i d25 , note 1 32 48 s c iss 7200 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 1200 pf c rss 230 pf t d(on) 26 ns t r 25 ns t d(off) 60 ns t f 13 ns q g(on) 260 nc q gs v gs = 10v, v ds = 0.5 ? v d ss , i d = 0.5 ? i d25 56 nc q gd 120 nc r thjc 0.11 c/w r thck 0.13 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 50 a i sm repetitive pulse width limited by t jm 200 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns q rm 1.1 c i rm 8.0 a i f = 25a, v gs = 0v -di/dt = 100a/ s v r = 100v note: 1. pulse test, t 300 s, duty cycle, d 2%. resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 ? (external) plus264 tm (ixfb) outline ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537
? 2010 ixys corporation, all rights reserved IXFB50N80Q2 fig. 1. output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 45 50 012345678 v ds - volts i d - amperes v gs = 10v 7v 5 v 6 v fig. 2. extended output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 90 100 0 3 6 9 12 15 18 21 24 27 30 v ds - volts i d - amperes v gs = 10v 7v 6 v 5 v fig. 3. output characteristics @ t j = 125oc 0 5 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10 12 14 16 18 20 v ds - volts i d - amperes v gs = 10v 5 v 6v fig. 4. r ds(on) normalized to i d = 25a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 50a i d = 25a fig. 5. r ds(on) normalized to i d = 25a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 102030405060708090100110 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 10 20 30 40 50 60 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXFB50N80Q2 ixys ref:f_50n80q2(95)1-18-10-c fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 12. maximum transient thermal impedance 0.200 fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 100 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 0 102030405060708090100 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 160 0.20.40.60.81.01.21.4 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 40 80 120 160 200 240 q g - nanocoulombs v gs - volts v ds = 400v i d = 25a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss
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